MC74HC595AN |
RFQ for MC74HC595AN Required Field |
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| Technical/Catalog Information | MC74HC595AN |
| Vendor | ON Semiconductor |
| Category | Integrated Circuits (ICs) |
| Logic Type | Shift Register |
| Function | Serial to Parallel |
| Number of Elements | 1 - Single |
| Number of Bits per Element | 8 |
| Output Type | Standard |
| Voltage - Supply | 2 V ~ 6 V |
| Mounting Type | Through Hole |
| Package / Case | 16-DIP |
| Packaging | Tube |
| Operating Temperature | -55°C ~ 125°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MC74HC595AN MC74HC595AN MC74HC595ANOS ND MC74HC595ANOSND MC74HC595ANOS |
| Product | Manufacturers | Pack | D/C |
| MC74HC595AN | - | - | 95+ |
The MC74HC595A consists of an 8bit shift register and an 8bit Dtype latch with threestate parallel outputs. The shift register accepts serial data and provides a serial output. The shift register also provides parallel data to the 8bit latch. The shift register and latch have independent clock inputs. This device also has an asynchronous reset for the shift register.
The HC595A directly interfaces with the SPI serial data port on CMOS MPUs and MCUs.
Features |
| • Output Drive Capability: 15 LSTTL Loads• Outputs Directly Interface to CMOS, NMOS, and TTL• Operating Voltage Range: 2.0 to 6.0 V• Low Input Current: 1.0 mA• High Noise Immunity Characteristic of CMOS Devices• In Compliance with the Requirements Defined by JEDEC Standard No. 7A• Chip Complexity: 328 FETs or 82 Equivalent Gates• Improvements over HC595- Improved Propagation Delays- 50% Lower Quiescent Power- Improved Input Noise and Latchup Immun |
| Symbol | Parameter | Value | Unit |
| vcc | DC Supply Voltage (Referenced to GND) | 0.5 to +7.0 | V |
| VIN | DC Input Voltage (Referenced to GND) | 0.5 to VCC + 0.5 | V |
| VOUT | DC Output Voltage (Referenced to GND) | 0.5 to VCC + 0.5 | V |
| LIN | DC Input Current, per Pin | ±20 | mA |
| IOUT | DC Onput Current, per Pin | ±35 | mA |
| ICC | DC Supply Current Per Supply Pin | ±75 | mA |
| PD | Power dissipation in still air piastic DIP SOIC package |
750 500 |
mW |
| TSTG | Storage Temperature | 65 to +150 | °C |
| TL | Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) |
260 | °C |
